| 1. | State - of - the - art of the on - chip copper interconnect technology for ulsi ' s
集成电路片内铜互连技术的发展 |
| 2. | The power3 - ii reimplemented power3 using copper interconnects , delivering double the performance at about the same price
Power3 - ii使用铜作为连接介质重新实现了power3 ，这样以相同的价格可以获得两倍的性能。 |
| 3. | Studies on the stress of copper interconnects include the stress measurement by xrd , computer simulation and observation the local stress distribution with snam
利用薄膜应力测试分布仪和xrd测量硅基铜膜及铜互连线薄膜宏观应力。 |
| 4. | Studies on the microstructure of copper interconnects include the determination of grain size by afm and sem , the measurement of texture by xrd and ebsd , the evaluation of barriers by xps and aes
铜互连线的微观结构的研究：通过afm 、 sem 、 tem等的分析方法对铜膜及铜互连线薄膜的晶粒尺寸进行了评价。 |
| 5. | In this thesis , focusing on the copper diffusion failure of copper interconnects in the ulsi , such as electromigration , stressmigration and copper diffusing into silicon dioxide and silicon , the microstructure and the stress of copper interconnects in ulsi have been studied systemically
本论文从ulsi铜互连技术可靠性研究中的铜扩散失效问题出发，针对电徙动失效、应力迁移失效、层间扩散失效问题，对铜互连线的微观结构和应力进行了研究。 |
| 6. | The results indicate the stress of copper interconnects generates in the metallization and the thermal stress caused by thermal mismatch during the damascene process is the main stress . the thermal stress distribution in copper interconnects has been simulated by the finite element analysis software with the different trench structures
对测量结果的分析得出金属薄膜的淀积是造成铜互连线中应力的主要原因，热应力在铜互连线应力中占较大比例，热处理后铜互连线中应力减小。 |
